| PART |
Description |
Maker |
| CY7C150-10PC CY7C150-15SC CY7C150-25DMB CY7C150-35 |
1Kx4 Static RAM 1K X 4 CACHE SRAM, 12 ns, PDIP24
1Kx4 Static RAM 1K X 4 CACHE SRAM, 15 ns, CDIP24
1Kx4 Static RAM 1K X 4 CACHE SRAM, 15 ns, PDSO24
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C178-10NC CY7C178-12JC CY7C178-8NC CY7C178 CY7C |
16-Bit Level Shifting Transceiver
32K x 18 Synchronous Cache RAM 32K X 18 CACHE SRAM, 10 ns, PQCC52
32K x 18 Synchronous Cache RAM 32K的18同步高速缓存内
32K x 18 Synchronous Cache RAM 32K X 18 CACHE SRAM, 8.5 ns, PQFP52
IC DRVR UNIV 20BIT 3ST 56-TSSOP
18-Bit Universal Bus Driver, LE/
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| IS61LPS25672A-250B1 IS61LPS25672A-250B1I IS61LPS10 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PBGA165
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
MEAN WELL Enterprises Co., Ltd.
|
| IS61LPS25618A-250B2 IS61LPS25618A-250B2I IS61LPS25 |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 32 CACHE SRAM, 2.6 ns, PQFP100
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PQFP100
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA119
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 32 CACHE SRAM, 3.1 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| IS61VPS25636A-200TQ2I IS61VPS25636A-250TQI |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
|
